K4S641632K - 64Mb K-die SDRAM

Samsung semiconductor

K4S641632K Description

K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND.
The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 word.

K4S641632K Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S641632K Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. 1

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Datasheet Details

Part number: K4S641632K
Manufacturer: Samsung semiconductor
File Size: 211.22 KB
Datasheet: K4S641632K_Samsungsemiconductor.pdf
Description: 64Mb K-die SDRAM

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64Mb K-die SDRAM Samsung semiconductor

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