K4S641632K Datasheet (Samsung semiconductor)

K4S641632K, 64Mb K-die SDRAM

The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock

K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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K4S641632K Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are