K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643232C
Manufacturer	Samsung semiconductor
File Size	1.13 MB
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S643232C Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S643232C, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S643232C datasheet.

Product details

Description

The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232F - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Published: Apr 7, 2005 |