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K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

K4S643232C Features

* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive

K4S643232C General Description

The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock c.

K4S643232C Datasheet (1.13 MB)

Preview of K4S643232C PDF

Datasheet Details

Part number:

K4S643232C

Manufacturer:

Samsung semiconductor

File Size:

1.13 MB

Description:

2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl.
K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the righ.

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K4S643232C SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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