K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

Samsung semiconductor

Description

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right.
The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high per.

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Datasheet Specifications

Part number: K4S643232E
Manufacturer: Samsung semiconductor
File Size: 102.47 KB
Datasheet: K4S643232E_Samsungsemiconductor.pdf
Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

Features

* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. K4S643232E-TC/L45 K4S643232E-TC/L50 K4S643232E-TC/L55 K4S643232E-TC/L60 K4S643232E-TC/L70 Max Freq. 222MHz 200MHz 183MHz 166MHz 143MHz Interface Package LVTTL 86 TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE

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📁 Related Datasheet

K4S643232H-TC-L50 K4S643232H-TC-L55 K4S643232H-TC-L60 K4S643232H-TC-L70 K4S643232H-UC-L50 K4S643232H-UC-L55

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K4S643232E SDRAM 512K 32bit Banks Synchronous DRAM LVTTL3.3V Samsung semiconductor

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