K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643232E
Manufacturer	Samsung semiconductor
File Size	102.47 KB
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
Datasheet	K4S643232E Datasheet
Additional preview pages of the K4S643232E datasheet.

Product details

Description

The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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Published: Apr 7, 2005 |