* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive
K4S643232E Datasheet (102.47 KB)
K4S643232E
Samsung semiconductor
102.47 KB
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl(3.3v).
K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right.
📁 Related Datasheet
K4S643232C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S643232F 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S643232H-TC-L50 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L55 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L60 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-TC-L70 64Mb H-die (x32) SDRAM (Samsung)
K4S643232H-UC-L50 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L55 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L60 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L70 2M x 32 SDRAM (Samsung)
TAGS
Image Gallery
