* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive
K4S643232F Datasheet (101.80 KB)
K4S643232F
Samsung semiconductor
101.80 KB
2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl.
K4S643232F CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right.
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