K4S643232F - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643232F
Manufacturer	Samsung semiconductor
File Size	101.80 KB
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S643232F Datasheet
Additional preview pages of the K4S643232F datasheet.

Product details

Description

The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Published: Apr 7, 2005 |