K6F1616U6M 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

www.DataSheet4U.com Preliminary K6F1616U6M Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revisio.
The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

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Datasheet Specifications

Part number: K6F1616U6M
Manufacturer: Samsung semiconductor
File Size: 156.62 KB
Datasheet: K6F1616U6M_Samsungsemiconductor.pdf
Description: 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Features

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three state output

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K6F1616U6M bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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