K6F1616U6M Datasheet - Samsung semiconductor

K6F1616U6M 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

www.DataSheet4U.com Preliminary K6F1616U6M Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Change package type : from FBGA to TBGA Draft Date August 22, 2000 November 21, 2000 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electroni.

K6F1616U6M Datasheet (156.62 KB)

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Datasheet Details

Part number:

K6F1616U6M

Manufacturer:

Samsung semiconductor

File Size:

156.62 KB

Description:

1m x 16 bit super low power and low voltage full cmos static ram.

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K6F1616U6M bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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