The K6R1008C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
The K6R1008C1A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG′s advan
PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM Revision History Rev.
No.
Rev.
0.0 Rev.
1.0 History Initial release with Preliminary.
Release to final Data Sheet.
1.1.
Delete Preliminary Update D.C parameters.
2.1.
Update D.C parameters Previous spec.
ITEMS (12/15/17/20ns part) ICC 200/190/180/170mA ISB 30mA ISB1 10mA Draft Data Apr.
22th, 1995 Feb.
29th,
K6R1008C1A-I15 Features
* Fast Access Time 12, 15, 20ns(Max.)
* Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating K6R1008C1A-12 : 170mA(Max.) K6R1008C1A-15 : 165mA(Max.) K6R1008C1A-20 : 160mA(Max.)
* Single 5.0V±10% Power Supply
* TTL Compatible Inputs and Outputs
K6R1008C1A-I15_Samsungsemiconductor.pdf
Datasheet Details
K6R1008C1A-I15
Samsung semiconductor
168.44 KB
128kx8 high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ranges..
📁 Related Datasheet
📌 All Tags
