K6R4004V1D Datasheet, Ram, Samsung semiconductor

K6R4004V1D Features

• Ram
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation Standby (TTL) :20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004V1D-08: 80mA(Max.) K6R4004V1D-10: 65mA(Max.)
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Part number:

K6R4004V1D

Manufacturer:

Samsung semiconductor

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248.36kb

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📄 Datasheet

Description:

1mx4 bit high speed static ram. The K6R4004V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004V1D uses

K6R4004V1D Application

• Applications The K6R4004V1D is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) A0 A1 A2 A3 A4 CS 1 2 3 4 5 6 7 8 9 10 11 12

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K6R4004V1D

Samsung semiconductor

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