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K6R4004V1D

1Mx4 Bit High Speed Static RAM

K6R4004V1D Features

* Fast Access Time 8,10ns(Max.)

* Low Power Dissipation Standby (TTL) :20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004V1D-08: 80mA(Max.) K6R4004V1D-10: 65mA(Max.)

* Single 3.3±0.3V Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No

K6R4004V1D General Description

The K6R4004V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adv.

K6R4004V1D Datasheet (248.36 KB)

Preview of K6R4004V1D PDF

Datasheet Details

Part number:

K6R4004V1D

Manufacturer:

Samsung semiconductor

File Size:

248.36 KB

Description:

1mx4 bit high speed static ram.
K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS .

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K6R4004V1D 1Mx4 Bit High Speed Static RAM Samsung semiconductor

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