* 2.8V + 5% power supply for device operation
* 2.8V + 5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst t
K4D26323RA Datasheet (303.19 KB)
K4D26323RA
Samsung
303.19 KB
1m x 32bit x 4 banks double data rate synchronous ram.
VDD / VDDQ=2.8V K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directiona.
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