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K4D26323RA 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

K4D26323RA Description

* VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directiona.
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32.

K4D26323RA Features

* 2.8V + 5% power supply for device operation
* 2.8V + 5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst t

K4D26323RA Applications

* - 4 - Rev. 2.0 (Jan. 2003)
* VDD / VDDQ=2.8V
* K4D26323RA-GC PIN CONFIGURATION (Top View) 2 B C D E F G H J K L M N DQS0 DQ4 DQ6 DQ7 DQ17 DQ19 DQS2 DQ21 DQ22 CAS RAS CS 128M DDR SDRAM 3 DM0 VDDQ DQ5 VDDQ DQ16 DQ18 DM2 DQ20 DQ23 WE NC NC 4 VSSQ NC VSSQ VDD VDDQ VDDQ NC VDDQ VDDQ VDD N

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Datasheet Details

Part number
K4D26323RA
Manufacturer
Samsung
File Size
303.19 KB
Datasheet
K4D26323RA_Samsungsemiconductor.pdf
Description
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

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32Bit Banks Double Data Rate Synchronous RAM Samsung
Samsung K4D26323RA-like datasheet