K4D26323RA Datasheet (Samsung) - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

K4D26323RA, 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

VDD / VDDQ=2.8V K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

- 1 - Rev.

2.0 (Jan.

2003) VDD / VDDQ=2.8V K4D26323RA-GC Revision History Revision 2.0 (January 16, 2003) Changed package ball height from 0.25mm to 0.35mm 128M DDR S

K4D26323RA Features

* 2.8V + 5% power supply for device operation

* 2.8V + 5% power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst t