K4E170411D Datasheet - Samsung

K4E170411D 4M x 4Bit CMOS Dynamic RAM

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consum.

K4E170411D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consump

K4E170411D_Samsungsemiconductor.pdf