K4E170812D

2M x 8Bit CMOS Dynamic RAM

Samsung

K4E170812D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power co

K4E170812D General Description

This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consum.

K4E170812D Datasheet (257.05 KB)

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Datasheet Details

Part number:

K4E170812D

Manufacturer:

Samsung

File Size:

257.05 KB

Description:

2m x 8bit cmos dynamic ram.

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K4E170812D 8Bit CMOS Dynamic RAM Samsung

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K4E170812D Features

K4E170812D General Description

Datasheet Details

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