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K4E170812D 2M x 8Bit CMOS Dynamic RAM

K4E170812D Description

K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out .
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.

K4E170812D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power co

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8Bit CMOS Dynamic RAM Samsung
Samsung K4E170812D-like datasheet