Datasheet Details
Part number:
K4E170812D
Manufacturer:
Samsung
File Size:
257.05 KB
Description:
2M x 8Bit CMOS Dynamic RAM
Features
* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power co
K4E170812D_Samsungsemiconductor.pdf
K4E170812D, 2M x 8Bit CMOS Dynamic RAM
This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.
or 4K Ref.), access time (-50 or -60), power consum
K4E170812D Distributor
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