Datasheet Details
Part number:
K4E171611D
Manufacturer:
Samsung
File Size:
553.93 KB
Description:
1M x 16Bit CMOS Dynamic RAM
Features
* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power c
K4E171611D_Samsungsemiconductor.pdf
K4E171611D, 1M x 16Bit CMOS Dynamic RAM
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.
or 4K Ref.), access time (-45, -50 or -60), power
K4E171611D Distributor
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