K4E171612D Datasheet (Samsung) - 1M x 16Bit CMOS Dynamic RAM

K4E171612D, 1M x 16Bit CMOS Dynamic RAM

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

or 4K Ref.), access time (-45, -50 or -60), power

K4E171612D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power c