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K4E171612D

1M x 16Bit CMOS Dynamic RAM

K4E171612D Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power c

K4E171612D General Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power .

K4E171612D Datasheet (553.93 KB)

Preview of K4E171612D PDF

Datasheet Details

Part number:

K4E171612D

Manufacturer:

Samsung

File Size:

553.93 KB

Description:

1m x 16bit cmos dynamic ram.

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K4E171612D 16Bit CMOS Dynamic RAM Samsung

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