Datasheet4U.com

K4M511533E-YC - Mobile-SDRAM

Samsung

📥 Download Datasheet

K4M511533E-YC Datasheet Preview — Preview of K4M511533E-YC PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: K4M511533E-YC
Manufacturer: Samsung
File Size: 106.48 KB
Datasheet: K4M511533E-YC_Samsungsemiconductor.pdf
Description: Mobile-SDRAM

K4M511533E-YC Product details

Description

The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with

Features

3.0V or 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PAS.

📁 Similar Datasheet

K4M511633C - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M51163LC - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M51163LE - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M51163PC-x - 8M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M51163PI - 512Mb I-die Mobile SDR SDRAM (Samsung semiconductor)
K4M513233C - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M51323LC-F - Mobile-SDRAM (Samsung semiconductor)
K4M51323LC-G - Mobile-SDRAM (Samsung semiconductor)

Samsung K4M511533E-YC-like datasheet

K4M511533E-Y - Mobile-SDRAM
K4M511533E-YP - Mobile-SDRAM
K4M511533E-YPC - Mobile-SDRAM
K4M511533E-C - Mobile-SDRAM
K4M511533E-F1H - Mobile-SDRAM
K4M511533E-F1L - Mobile-SDRAM