KM616FV1000 Datasheet (Samsung) - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

KM616FV1000, 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature ranges for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation

KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft 0.1 Revise - Erase 100ns part from KM616FS1000 Family - Add 150ns part on KM616FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V 1.0 Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power v

KM616FV1000 Features

* Process Technology : Full CMOS

* Organization : 64Kx16 bit

* Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V

* Low Data Retention Voltage : 1.5V(Min)

* Three state output status and TTL