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K4D263238I-VC - 128M-Bit GDDR SDRAM

K4D263238I-VC Description

www.DataSheet4U.com K4D263238I-VC 128M GDDR SDRAM 128Mbit GDDR SDRAM Revision 1.3 November 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32.

K4D263238I-VC Features

* 2.5V ± 5% power supply for device operation
* 2.5V ± 5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst typ

K4D263238I-VC Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. -

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128M-Bit GDDR SDRAM Samsung Electronics
Samsung Electronics K4D263238I-VC-like datasheet