KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM

Samsung Semiconductor

KM416S1021C Description

KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface .
The KM416S1021C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high pe.

KM416S1021C Features

* JEDEC standard 3.3V power supply
* SSTL_3 (Class II) compatible with multiplexed address
* Dual banks operation
* MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave)
* All i

KM416S1021C Applications

* ORDERING INFORMATION Part No. KM416S1021CT-G7 KM416S1021CT-GS Max Freq. 143MHz 100MHz(CL=2) Interface Package SSTL_3 (Class II) 54 TSOP(II) KM416S1021CT-G8 125MHz
* KM416S1021CT-GS : CL=2 only FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select Refresh Counter

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Datasheet Details

Part number: KM416S1021C
Manufacturer: Samsung Semiconductor
File Size: 103.43 KB
Datasheet: KM416S1021C_SamsungSemiconductor.pdf
Description: 512K x 16-Bit x 2-Bank SDRAM

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📌 All Tags

512K 16-Bit 2-Bank SDRAM Samsung Semiconductor

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KM416S1021C Stock/Price