Datasheet Details
- Part number
- K4R271669B
- Manufacturer
- Samsung semiconductor
- File Size
- 306.24 KB
- Datasheet
- K4R271669B_Samsungsemiconductor.pdf
- Description
- 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669B Description
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Versio.
Signal SIO1,SIO0 I/O I/O Type CMOSa CMOSa # of Pins 2 Description
Direct RDRAM™
Serial input/output.
K4R271669B Features
* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™
SAMSUNG
050
K4R xxxx 69B-N xxx
SAMSUNG 05
K4R271669B Applications
* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permit
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