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K4S280832E-TL75 128Mb E-die SDRAM Specification

K4S280832E-TL75 Description

SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May.2003 * Samsung Electronics reserves the right to .
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4.

K4S280832E-TL75 Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
* All inputs are sampled a

K4S280832E-TL75 Applications

* Ordering Information Part No. K4S280432E-TC(L)75 K4S280832E-TC(L)75 K4S281632E-TC(L)60/75 Orgainization 32Mb x 4 16Mb x 8 8Mb x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP(II) 54pin TSOP(II) 54pin TSOP(II) Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Pa

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128Mb E-die SDRAM Specification Samsung semiconductor
Samsung semiconductor K4S280832E-TL75-like datasheet