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K4S641633H-L - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung semiconductor

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Datasheet Details

Part number: K4S641633H-L
Manufacturer: Samsung semiconductor
File Size: 112.38 KB
Datasheet: K4S641633H-L_Samsungsemiconductor.pdf
Description: 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H-L Product details

Description

The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Published: Apr 7, 2005 |