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KM432S2030C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

KM432S2030C Description

KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 March 1999 Samsung Electronics reserves the right .
The KM432S2030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high pe.

KM432S2030C Features

* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive

KM432S2030C Applications

* ORDERING INFORMATION Part NO. KM432S2030CT-G/F6 KM432S2030CT-G/F7 KM432S2030CT-G/F8 KM432S2030CT-G/F10 Max Freq. 166MHz 143MHz 125MHz 100MHz Interface Package 86 TSOP(II) LVTTL FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQ

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Datasheet Details

Part number
KM432S2030C
Manufacturer
Samsung semiconductor
File Size
1.13 MB
Datasheet
KM432S2030C_Samsungsemiconductor.pdf
Description
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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📌 All Tags

SDRAM 512K 32bit Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor KM432S2030C-like datasheet