* High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7
2SC5778
Sanyo Semicon Device
202.33 KB
Npn triple diffused planar silicon transistor.
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Ordering number : ENN6992
2SC5778
NPN Triple Diffused Planar Silicon Transistor
2SC5778
Ultrahigh-Definition CRT Display Horizon.
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
