* Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co
2SC6044
Sanyo Semicon Device
67.24 KB
Npn epitaxial planar silicon transistors.
www.DataSheet4U.com Ordering number : ENN8251 2SC6044 2SC6044 Applications NPN Epitaxial Planar Silicon Transistors High-Current Switch.
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