* Low saturation voltage.
* Contains diode between collector and emitter.
* Contains bias resistance between collector and emitter.
* Large current capacity.
* Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications
2SD1998
Sanyo Semicon Device
66.16 KB
Pnp / npn epitaxial planar silicon transistors.
Ordering number : EN3130A
2SB1324 / 2SD1998
SANYO Semiconductors
DATA SHEET
2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors
Compact.
📁 Related Datasheet
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2SD1991A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1320A
6.9±0.1
Unit: mm
1.05 2.5±0.1 (1.45) ±0.05.
2SD1992A - Silicon NPN Transistor
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2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
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• Low collector to em.
2SD1993 - Silicon NPN Transistor
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2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q .
2SD1994A - Silicon NPN Transistor
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2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1.
2SD1995 - Silicon NPN Transistor
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Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q q q q
0.45–0..
2SD1996 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
2SD1996 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
