2SD1993 Datasheet - Panasonic Semiconductor

2SD1993 - Silicon NPN Transistor

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45 0.05 +0.1 (Ta=25˚C) 1 2 3 0.45 0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.5±0.5 2.5±0.5

2SD1993 Features

* 0.15 0.7 4.0 Unit nA µA V V V 55 55 7 210 650 1.0 200 150 VCE(sat) V MHz mV

* h FE Rank classification R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE Rank 1 Transistor PC

* Ta 500 120 Ta=25˚C 100 IB=400µA 350µA Ta=25˚C 300µA 250µA 80 200µA 60 150µA 100µA 50µA 100 2SD1993 IC

2SD1993_PanasonicSemiconductor.pdf