2SD1996 - Silicon NPN Transistor
2SD1996 Features
* q q q q 0.65 max. 14.5±0.5 0.45
* 0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150
* 55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45
