* 0.15 0.7 4.0 1 Transistor PC
* Ta 500 160 Ta=25˚C 140 400 100 25˚C Ta=75˚C 80
* 25˚C 2SD1995 IC
* VCE 120 VCE=10V IC
* VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA 20µA 10µA
2SD1995
Panasonic Semiconductor
40.69 KB
Silicon npn transistor.
Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q q q q
0.45
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2SD1991A
Silicon NPN epitaxial planer type
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6.9±0.1
Unit: mm
1.05 2.5±0.1 (1.45) ±0.05.
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Silicon NPN epitaxial planer type
Unit: mm
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2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q .
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(Panasonic Semiconductor)
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Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1.
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For low-voltage output amplification For muting For DC-DC converter
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6.9±0.1
0.15
0.7
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2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
2SD1997 - Epitaxial Planar Silicon Transistor
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