* 0.15 0.7 4.0 0.8 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC
* Ta 500 60 Ta=25˚C IB=160µA 50 1000 2SD1991A IC
* VCE 1200 VCE=10V Ta=25˚C IB
* VBE Collector po
2SD1991A
Panasonic Semiconductor
49.93 KB
Silicon npn transistor.
Transistor
2SD1991A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1320A
6.9±0.1
Unit: mm
1.05 2.5±0.1 (1.45) ±0.05.
📁 Related Datasheet
2SD1990 - Silicon NPN Triple Diffused Planar Transistor
(Panasonic)
.
2SD1992A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SD1992A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB1321A I Features
• Low collector to em.
2SD1993 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1993
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q .
2SD1994A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SD1994A
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification Complementary to 2SB1.
2SD1995 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8
q q q q
0.45–0..
2SD1996 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
2SD1996 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
.
2SD1997 - Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
.
