2SD1991A Datasheet - Panasonic Semiconductor

2SD1991A - Silicon NPN Transistor

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45 0.05 0.45 0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 1 2.5±0.5 2 2.5

2SD1991A Features

* 0.15 0.7 4.0 0.8 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC

* Ta 500 60 Ta=25˚C IB=160µA 50 1000 2SD1991A IC

* VCE 1200 VCE=10V Ta=25˚C IB

* VBE Collector po

2SD1991A_PanasonicSemiconductor.pdf