Part number:
2SJ670
Manufacturer:
Sanyo
File Size:
57.16 KB
Description:
P-channel silicon mosfet.
* P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren
2SJ670
Sanyo
57.16 KB
P-channel silicon mosfet.
📁 Related Datasheet
2SJ673 - P-Channel MOSFET
(Renesas)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect Transistor desig.
2SJ676 - P-Channel MOSFET
(Toshiba Semiconductor)
2SJ676
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOS V)
2SJ676
Switching Regulator, DC/DC Converter and Motor Drive Applications
.
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
2SJ600 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V.
2SJ601 - P-Channel Power MOSFET
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SJ601 is P-channel MOS Fi.
2SJ601 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ601
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
IC MOSFET
Features
Low .
2SJ602 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ602
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ602 is P-channel MOS Field Effect Transistor des.
2SJ602 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ602
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance RDS(on)1 = .
