2SJ676 Datasheet - Toshiba Semiconductor

2SJ676 P-Channel MOSFET

2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.0 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Cha.

2SJ676_ToshibaSemiconductor.pdf