Datasheet Details
- Part number
- 2SJ676
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 157.25 KB
- Datasheet
- 2SJ676_ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
2SJ676 Description
2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π *MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Motor Drive Appli.
2SJ676 Applications
* Unit: mm
z Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ. ) z High forward transfer admittance: |Yfs| = 2.0 S (typ. ) z Low leakage current: IDSS =
* 100 μA (max) (VDS =
* 200 V) z Enhancement mode: Vth =
* 1.5 to
* 3.5 V (VDS =
* 10 V, ID =
* 1 mA)
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