2SJ621 - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ621 is a .
2SJ624 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ624 is a switching device whic.
2SJ625 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ625 is a switching device whic.
2SJ626 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device whic.
2SJ628 - P-Channel Silicon MOSFET
(Sanyo Semicon)
Ordering number : ENN7271
2SJ628
P-Channel Silicon MOSFET
2SJ628
Ultrahigh-Speed Switching Applications
Preliminary Features
• • •
Package Dimensio.
2SJ629 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : EN9084A
2SJ629
..
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629
Features
• • •
General-Purpo.
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
2SJ600 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V.