2SJ620 Datasheet - Toshiba Semiconductor

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 100 V) Enhancement-model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm .

2SJ620 Datasheet (225.54 KB)