* Large current capacity.
* Low collector to emitter saturation voltage.
* Wide ASO. Package Dimensions unit:mm 2033 [2SB1296/2SD1936] ( ) : 2SB1296 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
D1936
Sanyo
188.23 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2468
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1296/2SD1936
AF Amplifier Applications
Applications
* AF power amplifier,.
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.
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GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.
