2SA1852 - PNP / NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Adoption of FBET process. High fT : fT=300MHz(typ). High breakdown voltage : VCEO=200V. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP. Shipped in reel tape container to facilitate antomatic mounting. 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.6 0.5 0.5 1 2 3 1.0 8.5 Specifications ( ) : 2SA1852 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to.

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Sanyo Semicon Device 2SA1852-like datasheet

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