Part number:
2SC2140
Manufacturer:
SavantIC
File Size:
141.07 KB
Description:
Silicon power transistor.
2SC2140
SavantIC
141.07 KB
Silicon power transistor.
📁 Related Datasheet
2SC2140 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V (Min) ·High Switching Speed ·Minimum Lot-to-.
2SC2148 - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are.
2SC2149 - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are.
2SC2101 - Silicon NPN POWER TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.)
( f=175MHz, VCC=12.5V, Pi=0.5W )
Un.
2SC2101 - Silicon NPN POWER TRANSISTOR
(HGSemi)
H G Semiconductors
HG RF POWER TRANSISTOR
2SC2101
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and condit.
2SC2102 - SILICON NPN TRANSISTOR
(Toshiba)
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W).
2SC2103A - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 1.
2SC2104 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P G =3W(Min.)
(f=470MHz, V C c=12.6V, Pi=0.4W) ..
