2SC2140 Datasheet, Transistor, SavantIC

PDF File Details

Part number:

2SC2140

Manufacturer:

SavantIC

File Size:

141.07kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

  • With TO-3 package
  • High voltage ,high speed APPLICATIONS
  • Switching regulator applications
  • High spe

  • Datasheet Preview: 2SC2140 📥 Download PDF (141.07kb)
    Page 2 of 2SC2140 Page 3 of 2SC2140

    2SC2140 Application

    • Applications
    • Switching regulator applications
    • High speed DC-DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter C

    TAGS

    2SC2140
    SILICON
    POWER
    TRANSISTOR
    SavantIC

    📁 Related Datasheet

    2SC2140 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Switching Speed ·Minimum Lot-to-.

    2SC2148 - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (NEC)
    DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are.

    2SC2149 - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (NEC)
    DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are.

    2SC2101 - Silicon NPN POWER TRANSISTOR (Toshiba)
    SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.) ( f=175MHz, VCC=12.5V, Pi=0.5W ) Un.

    2SC2101 - Silicon NPN POWER TRANSISTOR (HGSemi)
    H G Semiconductors HG RF POWER TRANSISTOR 2SC2101 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit.

    2SC2102 - SILICON NPN TRANSISTOR (Toshiba)
    1 SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po=15W (Min.) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W).

    2SC2103A - SILICON NPN TRANSISTOR (Toshiba)
    SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 1.

    2SC2104 - Silicon NPN Transistor (Toshiba)
    : SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) ..

    2SC2105 - SILICON NPN TRANSISTOR (Toshiba)
    SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =6W(Min.) (f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.

    2SC2106 - Silicon NPN Transistor (Toshiba)
    : SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P =12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W) . 100%.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts