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STT2602 - N-Channel Enhancement Mode Power MosFET

STT2602 Description

STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product .
The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

STT2602 Features

* Low On-Resistance
* Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95

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N-Channel Enhancement Mode Power MosFET SeCoS Halbleitertechnologie GmbH
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