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STT2622 - N-Channel Enhancement Mode Power MosFET

STT2622 Description

STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[ N-Channel Enhancement Mode Power Mos.FET .
The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

STT2622 Features

* RoHS Compliant
* Low Gate Charge
* Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45

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N-Channel Enhancement Mode Power MosFET SeCoS Halbleitertechnologie GmbH
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