STT253 Datasheet, Thyristor, Sirectifier Semiconductors

STT253 Features

• Thyristor
• International standard package
• Direct copper bonded Al2O3-ceramic base plate
• Planar passivated chips
• Isolation voltage 3600 V~ APPLICATIONS

PDF File Details

Part number:

STT253

Manufacturer:

Sirectifier Semiconductors

File Size:

286.35kb

Download:

📄 Datasheet

Description:

Thyristor.

STT253 Application

• Applications
• Motor control
• Power converter
• Heat and temperature control for industrial furnaces and chemical processes

TAGS

STT253

Sirectifier Semiconductors

📁 Related Datasheet

STT200 - Thyristor (Sirectifier Semiconductors)
STT200 Thyristor-Thyristor Modules Dimensions in mm (1mm=0.0394 ) Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 STT200.

sTT2200N16P55 - Soft starter (Infineon)
Sanftanlauf-Modul Soft Starter Module Key Parameters VDRM / VRRM Ioverload(21s) ITSM VT0 rT RthJA (21s) 1600 V 2180 A 21000 A 0,9 V 0,24 mΩ 0,082 K/.

sTT2200N18P55 - Soft starter (Infineon)
Sanftanlauf-Modul Soft Starter Module Key Parameters VDRM / VRRM Ioverload(21s) ITSM VT0 rT RthJA (21s) 1800 V 2180 A 21000 A 0,9 V 0,24 mΩ 0,082 K/.

STT2602 - N-Channel Enhancement Mode Power MosFET (SeCoS Halbleitertechnologie GmbH)
STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2602 ut.

STT2603 - P-Channel Enhancement Mode Power MosFET (SeCoS Halbleitertechnologie GmbH)
STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 .

STT2604 - N-Channel Enhancement Mode Power MosFET (SeCoS Halbleitertechnologie GmbH)
STT2604 Elektronische Bauelemente 5.5A, 3 0V,RDS(ON) 45m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 u.

STT2605 - P-Channel Enhancement Mode Power MosFET (SeCoS Halbleitertechnologie GmbH)
STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 .

STT2605-C - P-Channel Enhancement Mode Power MOSFET (SeCoS)
Elektronische Bauelemente STT2605-C -3.9A, -30V, RDS(O ) 52mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.

STT2622 - N-Channel Enhancement Mode Power MosFET (SeCoS Halbleitertechnologie GmbH)
STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[ N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance process.

STT27 - Thyristor (Sirectifier Semiconductors)
STT27 Thyristor-Thyristor Modules Dimensions in mm (1mm=0.0394 ) Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 STT27GK.