* Low rDS(on) trench technology Low thermal impedance Fast switching speed A E TSOP-6 L 6 5 4 Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players 1 2 3 B F DG K C H J PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7
STT3808NE Datasheet (753.29 KB)
STT3808NE
SeCoS Halbleitertechnologie
753.29 KB
N-channel mosfet.
STT3808NE
Elektronische Bauelemente 6A , 20V , RDS(ON) 20 mΩ N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies hal.
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