* TSOP-6 A E 6 5 4 Low rDS(on) trench technology Low thermal impedance Fast switching speed L Typical Applications:
* Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players B F DG 1 2 3 C K H J PA
STT3810N Datasheet (454.60 KB)
STT3810N
SeCoS Halbleitertechnologie
454.60 KB
N-channel mosfet.
STT3810N
Elektronische Bauelemente 6A , 20V , RDS(ON) 24.5 mļ N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of ā-Cā specifies ha.
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