Part number:
2SC2712
Manufacturer:
SeCoS
File Size:
368.24 KB
Description:
Npn transistor.
* Power Dissipation PCM: 150 mW (Tamb=25 oC)
* Collector Current ICM: 150 mA
* Collector-Base Voltage V(BR)CBO: 60 V
* Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C
* RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.01
2SC2712
SeCoS
368.24 KB
Npn transistor.
📁 Related Datasheet
2SC2710 - Silicon NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
· High DC current gain: hFE .
2SC2710 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC2710
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features
, 2SA1150 。 High DC.
2SC2712 - Silicon NPN Transistor
(Toshiba Semiconductor)
Bipolar Transistors Silicon NPN Epitaxial Type
2SC2712
1. Applications
• Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applicat.
2SC2712 - NPN TRANSISTOR
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
2SC2712
GENERAL PURPOSE TRANSISTOR NPN 150mW 150mA 50V
DESCRIPTION
The 2SC2712 is available in SOT-23 package
.
2SC2712 - Silicon NPN Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Low noise：NF=1dB (Typ.),10 dB(Max) Complementary to 2SA1162
Pb
Lead-free
.
2SC2712 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Min.
2SC2712 - AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SC2712
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current : VCEO=50V, IC=150mA (Max.) *.
2SC2712 - Silicon NPN Transistors
(Weitron Technology)
2SC2712
3 1 2
SOT-23
..
WEITRON
http://.weitron..tw
2SC2712
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Co.
