* TO-92 G H High Gain：Gpe=33 dB(Typ.)(f =45MHz) Good Linearity of hFE J A B K D Base Emitter
* Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector
* Base
2SC2717
SeCoS
197.28 KB
Npn plastic-encapsulated transistor.
2SC2717 Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fr.
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