SSD29N10J-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD29N10J-C 29A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.
The SSD29N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mo.

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Datasheet Specifications

Part number: SSD29N10J-C
Manufacturer: SeCoS
File Size: 219.62 KB
Datasheet: SSD29N10J-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=

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SSD29N10J-C N-Ch Enhancement Mode Power MOSFET SeCoS

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