* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 29N10 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD29N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=
SSD29N10J-C Datasheet (219.62 KB)
SSD29N10J-C
SeCoS
219.62 KB
N-ch enhancement mode power mosfet.
Elektronische Bauelemente
SSD29N10J-C
29A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies.
📁 Related Datasheet
SSD2007A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2009A Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2011A Dual P-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2019A Dual P-Channel Power MOSFET (Fairchild Semiconductor)
SSD2025 Dual N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSD2030N N-Channel MOSFET (South Sea Semiconductor)
SSD2030P P-Channel Enhancement Mode MOSFET (South Sea Semiconductor)
SSD20N03 N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD20N06 N-channel MOSFET (SeCoS)
SSD20N06-90D N-Channel MOSFET (SeCoS)
