SSE80N06-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSE80N06-C 80A, 60V, RDS(ON) 8.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSE80N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most.

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Datasheet Specifications

Part number: SSE80N06-C
Manufacturer: SeCoS
File Size: 520.88 KB
Datasheet: SSE80N06-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 80N06 =Date Code ORDER INFORMATION Part Number Type SSE80N06-C Lead (Pb)-free and Halogen-free REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54. 3.40 12.7 14.7 1.17 1.78

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SSE80N06-C N-Ch Enhancement Mode Power MOSFET SeCoS

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