BDY47
Seme LAB
11.30kb
Bipolar npn device.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC .
BDY43 - NPN Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.) ·DC Current Gain-
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BDY44 - NPN Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC .
BDY45 - NPN Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min.) ·DC Current Gain-
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BDY46 - Bipolar NPN Device
(Seme LAB)
BDY46
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY46 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BDY46
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC .
BDY47 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC .
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanch.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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BDY10 - Silicon NPN Transistor
(Valvo)
OEM:Valvo
Transistor BDY11
Datasheet
Silicon NPN Transistor BDY11
100V / 4A
DATASHEET
OEM – Valvo
Source: Valvo Datenbuch1967
Datasheet Rev. 1.3.
