Datasheet4U Logo Datasheet4U.com

BDY49 NPN Transistor

BDY49 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Excellent Safe Operating Area. High Current Capability. 100% avalanche t.

BDY49 Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A IB Base Curre

📥 Download Datasheet

Preview of BDY49 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDY49
Manufacturer
INCHANGE
File Size
199.58 KB
Datasheet
BDY49-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BDY46 - Bipolar NPN Device (Seme LAB)
  • BDY47 - Bipolar NPN Device (Seme LAB)
  • BDY10 - Silicon NPN Transistor (Valvo)
  • BDY11 - Silicon NPN Transistor (Valvo)
  • BDY12 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY13 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY13-6 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY20 - Bipolar NPN Device (Seme LAB)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BDY49-like datasheet