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BDY48 NPN Transistor

BDY48 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min). Wide area of safe operation. 100% avalanche tested. Minimum Lot-to-Lot v.

BDY48 Applications

* Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers. . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Em

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Datasheet Details

Part number
BDY48
Manufacturer
INCHANGE
File Size
198.09 KB
Datasheet
BDY48-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY48-like datasheet