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BDY45 Datasheet - INCHANGE

BDY45 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) *DC Current Gain- : hFE=20(Min.)@IC = 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation .

BDY45-INCHANGE.pdf

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Datasheet Details

Part number:

BDY45

Manufacturer:

INCHANGE

File Size:

200.98 KB

Description:

Npn transistor.

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BDY45 BDY45 NPN Transistor INCHANGE