Datasheet4U Logo Datasheet4U.com

BDY43 NPN Transistor

BDY43 Description

isc Silicon NPN Power Transistor BDY43 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min. DC Current Gain- : hFE=20(Min. Collector-Emitter Saturation Voltag.

BDY43 Applications

* Voltage regulator
* Inverter
* Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCES Collector-Emitter Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Colle

📥 Download Datasheet

Preview of BDY43 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDY43
Manufacturer
INCHANGE
File Size
202.69 KB
Datasheet
BDY43-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BDY46 - Bipolar NPN Device (Seme LAB)
  • BDY47 - Bipolar NPN Device (Seme LAB)
  • BDY10 - Silicon NPN Transistor (Valvo)
  • BDY11 - Silicon NPN Transistor (Valvo)
  • BDY12 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY13 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY13-6 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY20 - Bipolar NPN Device (Seme LAB)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BDY43-like datasheet