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BDY42

NPN Transistor

BDY42 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.)
*DC Current Gain- : hFE=20(Min.)@IC = 1A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 5A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device performance and reliable operation AP.

BDY42 Datasheet (202.44 KB)

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Datasheet Details

Part number:

BDY42

Manufacturer:

INCHANGE

File Size:

202.44 KB

Description:

Npn transistor.

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BDY42 NPN Transistor INCHANGE

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