HCD80R1K4

800V N-Channel Super Junction MOSFET

SemiHow

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 4.0 1.4 9.1 Unit V A Ω nC Application

HCD80R1K4

SemiHow

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800v n-channel super junction mosfet.

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HCD80R1K4 800V N-Channel Super Junction MOSFET SemiHow

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