HCS60R099ST Datasheet - SemiHow

600V N-Channel Super Junction MOSFET

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 30.7 99 75 Unit V A mΩ nC Application

HCS60R099ST

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600v n-channel super junction mosfet.

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